room temperature resistance

Test of Temperature Coefficient of Resistance for Room Temperature IR Detection Thin Film

室温红外探测薄膜电阻温度系数测试技术

People began to dream of materials that had zero resistance even at room temperature.

于是人们开始梦想着发现甚至在室温下也能够具有零电阻的材料.

DB has a negative resistance temperature characteristic from room temperature to approximately 1200? F ( 650? C ).

DB型 硅碳棒除在室温至1200? F ( 650? C ) 内存在负阻值.

The coating possessed excellent sliding wear resistance under both room and high temperature test conditions.

涂层在室温和高温干滑动磨擦条件下均具有优良的耐磨性能。

The experimental results show that positive temperature coefficient of resistance and breakdown voltage increase, but the resistivity of PTCR ceramics at room temperature changes little when appropriate Ag doped.

结果表明，适量的Ag掺杂对材料的室温电阻率（r）影响不大，并且还可以有效提高PTCR陶瓷的温度系数（aR）和耐电压（Vb）。

It's coefficient of magneto-resistance is Δ R/ R ≥ 9%, the coefficient of collector current amplify is MC> 587% ( in room temperature). The properties of spin transistor increase as the base thickness decreasing.

该薄膜磁阻系数ΔR/R≥9%，全金属自旋晶体管试样集电极电流变化MC>587%（常温），且其性能随基极Ag层厚度减小而增强。

Generally, it is difficult to spin titanium alloy at room temperature, because of its high deformation resistance and yield to tensile ratio.

钛合金的变形抗力和屈强比较大，其壳体室温变薄旋压成形有一定困难。

The vanadium oxide thin film has high temperature coefficient of resistance at near room temperature which is prepared by ion beam sputtering.

采用离子束溅射法制备了在室温附近具有高TCR氧化钒薄膜。

This paper relates the designing principle, structures, properties and applications of the simple low temperature sample room in the resistance-temperature apparatus.

本文叙述了简易低温样品室的设计原理、结构性能和它在电阻（R）&温度（T）测试仪中的应用。

Resistance at room temperature, R-T dependence, temperature coefficient of resistance and switching temperature T b of samples made from the ceramics sintered from1300to1350 ℃ for0.5h are measured.

测量了烧结条件为1300~1350℃的陶瓷材料试样的室温电阻、R T曲线、电阻温度系数及开关温度。